BSM50GAL120DN2HOSA1
IGBT MOD 1200V 78A 400WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM50GAL120DN2HOSA1 is a robust IGBT module designed for high-power applications. This single-switch configuration features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 78 A. With a power dissipation capability of 400 W, it is engineered for demanding thermal environments, operating at temperatures up to 150°C (TJ). The module's on-state voltage (Vce(on)) is a maximum of 3V at 15V gate-emitter voltage and 50A collector current, with a low collector cutoff current of 1 mA. Input capacitance (Cies) is specified at 3.3 nF at 25 V. The chassis mount package facilitates efficient heat sinking. This component is suitable for use in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single Switch |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 78 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 400 W |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 3.3 nF @ 25 V |
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