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BSM35GD120DN2E3224BPSA1

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BSM35GD120DN2E3224BPSA1

LOW POWER ECONO AG-ECONO2A-211

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies BSM35GD120DN2E3224BPSA1 is a full-bridge IGBT module designed for high-voltage, high-power applications. This component features a robust AG-ECONO2B package, suitable for chassis mounting and demanding thermal management. It offers a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 50 A, with a maximum power dissipation of 280 W. The module exhibits a typical Vce(on) of 3.2 V at 15 V gate-emitter voltage and 35 A collector current, ensuring efficient power switching. Input capacitance (Cies) is specified at 2 nF at 25 V. Operating at junction temperatures up to 150°C, this Infineon Technologies IGBT module is utilized in industrial automation, power conversion, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge
Operating Temperature150°C (TJ)
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 35A
NTC ThermistorNo
Supplier Device PackageAG-ECONO2B
IGBT Type-
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max280 W
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce2 nF @ 25 V

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