BSM35GD120DN2E3224BOSA1
IGBT MOD 1200V 50A 280WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM35GD120DN2E3224BOSA1 is a robust IGBT module designed for three-phase inverter applications. This chassis mount module features a 1200 V collector-emitter breakdown voltage and a continuous collector current (Ic) rating of 50 A, with a maximum power dissipation of 280 W. The module exhibits a typical Vce(on) of 3.2 V at 15 V gate-emitter voltage and 35 A collector current. It operates efficiently within an ambient temperature range up to 150°C (TJ) and includes a standard input with an input capacitance (Cies) of 2 nF at 25 V. This component is suitable for demanding applications in industrial automation and power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Phase Inverter |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 35A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 280 W |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 2 nF @ 25 V |
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