BSM35GD120DN2
IGBT MOD 1200V 50A 280WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM35GD120DN2 is an NPT IGBT module designed for three-phase inverter applications. This chassis mount module features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 50 A. The device offers a power dissipation of 280 W and a typical Vce(on) of 3.2 V at 15 V gate-emitter voltage and 35 A collector current. With an input capacitance (Cies) of 2 nF at 25 V, this module is suitable for demanding power conversion tasks. The operating junction temperature reaches up to 150°C. This component finds application in industrial automation, renewable energy systems, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Phase Inverter |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 35A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 280 W |
| Input Capacitance (Cies) @ Vce | 2 nF @ 25 V |
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