Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

BSM35GD120DLCE3224BOSA1

Banner
productimage

BSM35GD120DLCE3224BOSA1

IGBT MOD 1200V 70A 280W

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies BSM35GD120DLCE3224BOSA1 is a high-performance IGBT module featuring a full bridge configuration. This chassis mount device offers a robust 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 70 A, with a maximum power dissipation of 280 W. The module exhibits a typical Vce(on) of 2.6 V at 15 V gate-emitter voltage and 35 A collector current. Input capacitance (Cies) is rated at 2 nF at 25 V. Operating across a temperature range of -40°C to 125°C, this Infineon Technologies IGBT module is suitable for demanding applications in industrial power conversion, motor drives, and renewable energy systems. It is supplied in tray packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge
Operating Temperature-40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 35A
NTC ThermistorNo
Supplier Device PackageModule
IGBT Type-
Current - Collector (Ic) (Max)70 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max280 W
Current - Collector Cutoff (Max)80 µA
Input Capacitance (Cies) @ Vce2 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FS150R12N2T7B54BPSA1

LOW POWER ECONO

product image
FD300R12KE3HOSA1

IGBT MOD 1200V 480A 1470W

product image
F4150R17N3P4B58BPSA1

LOW POWER ECONO AG-ECONO3B-411