BSM35GB120DN2HOSA1
IGBT MOD 1200V 50A 280WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM35GB120DN2HOSA1 is a Half Bridge IGBT Module designed for high-power applications. This component features a robust 1200V collector-emitter breakdown voltage and a continuous collector current rating of 50A. The module offers a maximum power dissipation of 280W and a Vce(on) of 3.2V at 15V gate-emitter voltage and 35A collector current. With a standard input and input capacitance (Cies) of 2 nF @ 25V, it is suitable for demanding power conversion tasks. The BSM35GB120DN2HOSA1 is chassis mountable for efficient thermal management and operates effectively up to a junction temperature of 150°C. This module finds application in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 35A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 280 W |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 2 nF @ 25 V |
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