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BSM300GB120DLCE3256HOSA1

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BSM300GB120DLCE3256HOSA1

BSM300GB120 - INSULATED GATE BIP

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies BSM300GB120DLCE3256HOSA1 is a high-power IGBT module featuring two independent IGBTs. This component is designed for demanding applications requiring robust power handling capabilities. It offers a collector-emitter breakdown voltage of 1200 V and a maximum collector current of 625 A. The module exhibits a low on-state voltage (Vce(on)) of 2.6 V at 15 V gate-emitter voltage and 300 A collector current, contributing to efficient operation. With a maximum power dissipation of 2500 W and an operating temperature range of -40°C to 125°C, it is suitable for harsh environments. The input capacitance (Cies) is 21 nF at 25 V. This chassis mount module is utilized in industries such as industrial motor drives, renewable energy systems, and power supply applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
Configuration2 Independent
Operating Temperature-40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 300A
NTC ThermistorNo
Supplier Device PackageModule
IGBT Type-
Current - Collector (Ic) (Max)625 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max2500 W
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce21 nF @ 25 V

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