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BSM25GP120B2BOSA1

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BSM25GP120B2BOSA1

IGBT MODULE 1200V

Manufacturer: Infineon Technologies

Categories: IGBT Modules

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Infineon Technologies BSM25GP120B2BOSA1 is a Full Bridge IGBT Module designed for high-power applications. This chassis-mount module features a robust 1200V collector-emitter breakdown voltage and a maximum collector current of 45A. With a power dissipation of 230W and a Vce(on) of 2.55V at 15V Vge and 25A Ic, it offers efficient power switching. The module incorporates an NTC thermistor for thermal management and is suitable for demanding industrial environments. Its input is a three-phase bridge rectifier configuration, making it ideal for power factor correction, motor drives, and renewable energy inverters. The BSM25GP120B2BOSA1 is supplied in a module package for straightforward integration.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputThree Phase Bridge Rectifier
ConfigurationFull Bridge
Operating Temperature150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.55V @ 15V, 25A
NTC ThermistorYes
Supplier Device PackageModule
IGBT Type-
Current - Collector (Ic) (Max)45 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max230 W
Current - Collector Cutoff (Max)500 µA
Input Capacitance (Cies) @ Vce1.5 nF @ 25 V

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