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BSM25GD120DN2E3224BPSA1

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BSM25GD120DN2E3224BPSA1

LOW POWER ECONO AG-ECONO2A-211

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies BSM25GD120DN2E3224BPSA1 is a Full Bridge IGBT Module featuring a 1200 V collector-emitter breakdown voltage and a maximum collector current of 35 A. This module is rated for 200 W power dissipation and utilizes the AG-ECONO2B package with chassis mounting for efficient thermal management. It offers a Vce(on) of 3V at 15V gate-emitter voltage and 25A collector current, with a typical input capacitance (Cies) of 1.65 nF at 25 V. The module operates at a junction temperature up to 150°C and is supplied in a Tray package. This component finds application in industrial power conversion and motor drive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge
Operating Temperature150°C (TJ)
Vce(on) (Max) @ Vge, Ic3V @ 15V, 25A
NTC ThermistorNo
Supplier Device PackageAG-ECONO2B
IGBT Type-
Current - Collector (Ic) (Max)35 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max200 W
Current - Collector Cutoff (Max)800 µA
Input Capacitance (Cies) @ Vce1.65 nF @ 25 V

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