BSM25GD120DN2BOSA1
IGBT MOD 1200V 35A 200WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM25GD120DN2BOSA1 is a robust IGBT module designed for demanding power applications. This full-bridge configuration features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 35 A. With a maximum power dissipation of 200 W, it is engineered for efficient operation. The module offers a Vce(on) of 3V at 15V gate-emitter voltage and 25A collector current. Key specifications include an input capacitance (Cies) of 1.65 nF at 25 V and an operating junction temperature of 150°C. The chassis mount package facilitates straightforward integration into power systems. This component is commonly utilized in industrial motor drives, power supplies, and renewable energy inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Full Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 25A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 35 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 200 W |
| Current - Collector Cutoff (Max) | 800 µA |
| Input Capacitance (Cies) @ Vce | 1.65 nF @ 25 V |