BSM200GB120DN2HOSA1
IGBT MOD 1200V 290A 1400WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM200GB120DN2HOSA1 is a Half Bridge IGBT Module designed for high-power applications. This chassis-mount module features a robust 1200 V collector-emitter breakdown voltage and a maximum collector current of 290 A, with a power dissipation capability of 1400 W. The module exhibits a typical Vce(on) of 3V at 15V gate-emitter voltage and 200A collector current. Input capacitance (Cies) is specified at 13 nF at 25 V. Operating at junction temperatures up to 150°C, this component is well-suited for demanding industrial environments, including motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 200A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 290 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 1400 W |
| Current - Collector Cutoff (Max) | 4 mA |
| Input Capacitance (Cies) @ Vce | 13 nF @ 25 V |
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