BSM200GB120DLCHOSA1
IGBT MOD 1200V 420A 1550WManufacturer: Infineon Technologies
Categories: IGBT Modules
Quality Control: Learn More
Infineon Technologies BSM200GB120DLCHOSA1 is a Half Bridge IGBT Module designed for high-power applications. This module features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 420 A, with a power dissipation capability of 1550 W. The IGBT type is standard, offering a Vce(on) of 2.6 V at 15 V gate-emitter voltage and 200 A collector current. Input capacitance (Cies) is rated at 13 nF at 25 V. The module utilizes chassis mounting for efficient thermal management and operates within a temperature range of -40°C to 125°C. This component is suitable for demanding power conversion systems in industries such as industrial automation, renewable energy, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 200A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 420 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 1550 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 13 nF @ 25 V |
Request a Quote
Clients Also Buy
BSM400GA170DLS
IGBT MODULE
F3L225R12W3H3B11BPSA1
IGBT MODULE
F43L50R07W2H3FB11BPSA2
IGBT MOD 650V 50A 20MW
