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BSM15GD120DN2E3224BOSA1

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BSM15GD120DN2E3224BOSA1

IGBT MOD 1200V 25A 145W

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies BSM15GD120DN2E3224BOSA1 is a full bridge IGBT module designed for high-power applications. This chassis mount module offers a 1200V collector-emitter breakdown voltage and a continuous collector current of 25A, with a maximum power dissipation of 145W. Key electrical characteristics include a Vce(on) of 3V at 15V Vge and 15A Ic, and an input capacitance (Cies) of 1nF at 25V. The operating junction temperature can reach up to 150°C. This component is suitable for demanding applications within the industrial and automotive sectors. The module is supplied in tray packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge
Operating Temperature150°C (TJ)
Vce(on) (Max) @ Vge, Ic3V @ 15V, 15A
NTC ThermistorNo
Supplier Device PackageModule
IGBT Type-
Current - Collector (Ic) (Max)25 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max145 W
Current - Collector Cutoff (Max)500 µA
Input Capacitance (Cies) @ Vce1 nF @ 25 V

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