BSM150GB170DN2HOSA1
IGBT MOD 1700V 220A 1250WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM150GB170DN2HOSA1 is a robust IGBT module designed for demanding power applications. This half-bridge configuration features a high breakdown voltage of 1700 V and a continuous collector current capability of 220 A. The module delivers a maximum power dissipation of 1250 W, with a typical Vce(on) of 3.9V at 15V gate-emitter voltage and 150A collector current. Input capacitance (Cies) is specified at 20 nF @ 25 V. Engineered for efficient thermal management, it utilizes a chassis mount configuration and operates at junction temperatures up to 150°C. The BSM150GB170DN2HOSA1 is suitable for use in industrial motor drives, renewable energy systems, and high-voltage power conversion applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 150A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 220 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Power - Max | 1250 W |
| Current - Collector Cutoff (Max) | 1.5 mA |
| Input Capacitance (Cies) @ Vce | 20 nF @ 25 V |
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