BSM150GB120DLCHOSA1
IGBT MOD 1200V 300A 1250WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM150GB120DLCHOSA1 is a robust IGBT module featuring a half-bridge configuration. This module is rated for 1200 V collector-emitter breakdown voltage and a maximum collector current of 300 A. With a power dissipation capability of 1250 W, it is engineered for demanding applications. The BSM150GB120DLCHOSA1 offers a typical Vce(on) of 2.6V at 15V gate-emitter voltage and 150A collector current, and an input capacitance (Cies) of 11 nF at 25V. Designed for chassis mounting, this module operates reliably across a temperature range of -40°C to 125°C. Applications include industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 150A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 300 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 1250 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 11 nF @ 25 V |
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