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BSM10GD120DN2E3224BPSA1

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BSM10GD120DN2E3224BPSA1

LOW POWER ECONO AG-ECONO2A-211

Manufacturer: Infineon Technologies

Categories: IGBT Modules

Quality Control: Learn More

Infineon Technologies BSM10GD120DN2E3224BPSA1 is a full bridge IGBT module designed for high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 15 A. The module offers a typical Vce(on) of 3.2V at 15V gate-emitter voltage and 10A collector current, with a maximum power dissipation of 80 W. Its AG-ECONO2B package facilitates chassis mounting for effective thermal management. Input capacitance (Cies) is rated at 530 pF at 25V. This module operates at an ambient temperature up to 150°C (TJ). Applications for this Infineon Technologies IGBT module include industrial motor drives and power conversion systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge
Operating Temperature150°C (TJ)
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 10A
NTC ThermistorNo
Supplier Device PackageAG-ECONO2B
IGBT Type-
Current - Collector (Ic) (Max)15 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max80 W
Current - Collector Cutoff (Max)400 µA
Input Capacitance (Cies) @ Vce530 pF @ 25 V

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