BSM10GD120DN2E3224BOSA1
IGBT MODULE 1200V 15A 80WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM10GD120DN2E3224BOSA1 is a full bridge IGBT module designed for robust power switching applications. This chassis mount module offers a 1200 V collector-emitter breakdown voltage and a maximum collector current of 15 A. It features a low Vce(on) of 3.2V at 15V gate-emitter voltage and 10A collector current, contributing to efficient operation. The module has a maximum power dissipation of 80 W and an input capacitance (Cies) of 530 pF at 25 V. Operating at junction temperatures up to 150°C, this component is suitable for demanding applications in industrial automation, renewable energy systems, and electric vehicle powertrains. The Infineon Technologies BSM10GD120DN2E3224BOSA1 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Full Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 10A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 80 W |
| Current - Collector Cutoff (Max) | 400 µA |
| Input Capacitance (Cies) @ Vce | 530 pF @ 25 V |
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