BSM100GD120DN2BOSA1
IGBT MOD 1200V 150A 680WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM100GD120DN2BOSA1 is a Three Phase Inverter IGBT Module designed for high-power applications. This chassis mount module offers a robust 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 150 A. With a maximum power dissipation of 680 W and a low collector-emitter saturation voltage of 3 V at 15 V gate-emitter voltage and 100 A collector current, it ensures efficient operation. The module features a standard input and an input capacitance (Cies) of 6.5 nF at 25 V. It operates reliably up to a junction temperature of 150°C. This component is commonly utilized in industrial automation and power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Phase Inverter |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 680 W |
| Current - Collector Cutoff (Max) | 2 mA |
| Input Capacitance (Cies) @ Vce | 6.5 nF @ 25 V |
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