BSM100GD120DN2BDLA1
IGBT MODULE 1200VManufacturer: Infineon Technologies
Categories: IGBT Modules
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The Infineon Technologies BSM100GD120DN2BDLA1 is a high-performance IGBT module featuring a full bridge configuration. This component is rated for a collector-emitter breakdown voltage of 1200V and a maximum continuous collector current of 150A. With a power dissipation capability of 680W, it is designed for demanding applications. The module exhibits a typical Vce(on) of 3V at 15V gate-emitter voltage and 100A collector current, and an input capacitance (Cies) of 6.5 nF at 25V. Its chassis mount design facilitates efficient thermal management, crucial for operation up to a junction temperature of 150°C. This Infineon Technologies IGBT module is suitable for power conversion systems across industrial automation, motor drives, and renewable energy sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Full Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 680 W |
| Current - Collector Cutoff (Max) | 2 mA |
| Input Capacitance (Cies) @ Vce | 6.5 nF @ 25 V |
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