BSM100GB170DN2HOSA1
IGBT MOD 1700V 145A 1000WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM100GB170DN2HOSA1 is a Half Bridge IGBT Module designed for high-voltage power applications. This module features a 1700V collector-emitter breakdown voltage and a maximum continuous collector current of 145A, with a power dissipation of 1000W. The Vce(on) is specified at 3.9V maximum at 15V gate-emitter voltage and 100A collector current. Input capacitance (Cies) is 16 nF at 25V. The device is chassis mountable and operates at junction temperatures up to 150°C. This component is suitable for demanding industrial applications including motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 145 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Power - Max | 1000 W |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 16 nF @ 25 V |
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