BSM100GAL120DLCKHOSA1
IGBT MOD 1200V 205A 835WManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies BSM100GAL120DLCKHOSA1 is a single-chopper IGBT module designed for high-power applications. This chassis-mount module features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 205 A. With a maximum power dissipation of 835 W and a low Vce(on) of 2.6 V at 15 V gate-emitter voltage and 100 A collector current, it offers efficient power handling. The input capacitance (Cies) is 6.5 nF at 25 V. Operating across an industrial temperature range of -40°C to 125°C, this module is suitable for demanding environments. It is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single Chopper |
| Operating Temperature | -40°C ~ 125°C |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | Module |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 205 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 835 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 6.5 nF @ 25 V |
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