IRS2330SPBF
IC GATE DRVR HALF-BRIDGE 28SOICManufacturer: Infineon Technologies
Categories: Gate Drivers
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Infineon Technologies IRS2330SPBF is a high-voltage, high-speed power MOSFET and IGBT gate driver IC. This advanced device features a half-bridge configuration with three independent channels, each capable of driving a high-side and low-side switch. The IRS2330SPBF offers robust performance with a maximum bootstrap voltage of 600V and a supply voltage range of 10V to 20V. Peak output current capabilities are 250mA sourcing and 500mA sinking, facilitating efficient switching of power transistors.
Designed for demanding applications, this driver IC supports both IGBT and N-Channel MOSFET gate types, with typical rise and fall times of 80ns and 35ns respectively. The inverting input logic allows for flexible control, with specified logic voltage thresholds (VIL/VIH) of 0.8V and 2.2V. The IRS2330SPBF is housed in a 28-SOIC package suitable for surface mount assembly and operates across a wide temperature range from -40°C to 150°C (TJ). Its capabilities make it well-suited for motor control, industrial power supplies, and electric vehicle applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 28-SOIC (0.295"", 7.50mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Voltage - Supply | 10V ~ 20V |
| Input Type | Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Supplier Device Package | 28-SOIC |
| Rise / Fall Time (Typ) | 80ns, 35ns |
| Channel Type | 3-Phase |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 6 |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 0.8V, 2.2V |
| Current - Peak Output (Source, Sink) | 250mA, 500mA |
| Programmable | Not Verified |
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