IRS21867SPBF
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Infineon Technologies
Categories: Gate Drivers
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Infineon Technologies IRS21867SPBF is a high-performance, half-bridge gate driver IC designed for demanding power applications. This device features two independent gate drive channels, each capable of sourcing and sinking 4A peak output current, enabling robust control of IGBT and N-Channel MOSFET power switches. With a high-side voltage capability of up to 600V and a supply voltage range of 10V to 20V, the IRS21867SPBF is suitable for high-voltage power conversion circuits.
The logic input is compatible with CMOS and TTL levels, with defined VIL and VIH thresholds at 0.8V and 2.5V respectively. The device offers typical rise and fall times of 22ns and 18ns, facilitating efficient switching. Packaged in an 8-SOIC surface-mount case, the IRS21867SPBF operates across an extended temperature range of -40°C to 150°C (TJ). This component finds application in power supplies, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Voltage - Supply | 10V ~ 20V |
| Input Type | CMOS, TTL |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Supplier Device Package | 8-SOIC |
| Rise / Fall Time (Typ) | 22ns, 18ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 0.8V, 2.5V |
| Current - Peak Output (Source, Sink) | 4A, 4A |
| Programmable | Not Verified |
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