IRS2111SPBF
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Infineon Technologies
Categories: Gate Drivers
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Infineon Technologies IRS2111SPBF is a high-voltage, high-speed power MOSFET and IGBT gate driver IC designed for half-bridge configurations. This device features two independent channels, enabling both inverting and non-inverting logic inputs for flexible control. The IRS2111SPBF offers a peak output current of 290mA source and 600mA sink, coupled with typical rise and fall times of 75ns and 35ns respectively, facilitating efficient switching in demanding applications. It supports a high-side bootstrap voltage up to 600V and operates on a supply voltage range of 10V to 20V. The logic voltage thresholds are specified at 8.3V (VIL) and 12.6V (VIH). This component is suitable for surface mounting within an 8-SOIC package, operating across an extended temperature range of -40°C to 150°C. Its robust design makes it a key component in industrial motor control, power supplies, and automotive power electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Voltage - Supply | 10V ~ 20V |
| Input Type | Inverting, Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Supplier Device Package | 8-SOIC |
| Rise / Fall Time (Typ) | 75ns, 35ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 8.3V, 12.6V |
| Current - Peak Output (Source, Sink) | 290mA, 600mA |
| Programmable | Not Verified |
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