IRS2108SPBF
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Infineon Technologies
Categories: Gate Drivers
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Infineon Technologies IRS2108SPBF is a high-voltage, high-speed power MOSFET and IGBT gate driver. This device features a half-bridge configuration with two independent channels, each capable of driving a high-side and low-side switch. The IRS2108SPBF supports a bootstrap voltage up to 600V and operates with a supply voltage range of 10V to 20V. It offers both inverting and non-inverting input options, accommodating various control schemes. Peak output current is specified at 290mA sourcing and 600mA sinking, with typical rise and fall times of 100ns and 35ns respectively. The logic voltage thresholds are 0.8V for VIL and 2.5V for VIH. This component is suitable for surface mounting in an 8-SOIC package. Applications include industrial motor control and power supply systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Voltage - Supply | 10V ~ 20V |
| Input Type | Inverting, Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Supplier Device Package | 8-SOIC |
| Rise / Fall Time (Typ) | 100ns, 35ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 0.8V, 2.5V |
| Current - Peak Output (Source, Sink) | 290mA, 600mA |
| Programmable | Not Verified |
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