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IR21814S

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IR21814S

IC GATE DRVR HALF-BRIDGE 14SOIC

Manufacturer: Infineon Technologies

Categories: Gate Drivers

Quality Control: Learn More

Infineon Technologies IR21814S is a Half-Bridge Gate Driver IC featuring independent channels and a non-inverting input. This device is designed for driving IGBT and N-Channel MOSFET power devices in half-bridge configurations. It offers a high-side voltage capability of up to 600V, supported by a bootstrap mechanism. The IR21814S provides robust output drive characteristics with peak source and sink currents of 1.9A and 2.3A respectively, and typical rise/fall times of 40ns and 20ns. The operating supply voltage ranges from 10V to 20V, with logic threshold levels at 0.8V (VIL) and 2.7V (VIH). Packaged in a 14-SOIC surface-mount format, this component is suitable for applications in industrial power supplies, motor control, and electric vehicle powertrains. The device operates across an extended temperature range of -40°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case14-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package14-SOIC
Rise / Fall Time (Typ)40ns, 20ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.7V
Current - Peak Output (Source, Sink)1.9A, 2.3A
ProgrammableNot Verified

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