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IR2113SPBF

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IR2113SPBF

IC GATE DRVR HALF-BRIDGE 16SOIC

Manufacturer: Infineon Technologies

Categories: Gate Drivers

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Infineon Technologies IR2113SPBF is a high-voltage, high-speed power MOSFET and IGBT gate driver. This device features a half-bridge configuration with two independent, non-inverting channels. Each channel is capable of sourcing and sinking 2A of peak output current, facilitating rapid switching transitions with typical rise and fall times of 25ns and 17ns respectively. The high-side voltage, utilized for bootstrap operation, can reach up to 600V, while the supply voltage range is 3.3V to 20V. Logic voltage thresholds for input signals are specified at 6V (VIL) and 9.5V (VIH). Designed for surface mounting, the IR2113SPBF is housed in a 16-SOIC package with a 7.50mm width, suitable for operation across an extended temperature range of -40°C to 150°C. This component finds application in power conversion systems, motor control, and industrial power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case16-SOIC (0.295"", 7.50mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply3.3V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package16-SOIC
Rise / Fall Time (Typ)25ns, 17ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH6V, 9.5V
Current - Peak Output (Source, Sink)2A, 2A
ProgrammableNot Verified

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