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IR2111S

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IR2111S

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Infineon Technologies

Categories: Gate Drivers

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The Infineon Technologies IR2111S is a high-voltage, high-speed power MOSFET and IGBT gate driver. This half-bridge driver IC features non-inverting inputs and is designed for synchronous channel applications. It provides 250mA source and 500mA sink peak output current, enabling efficient driving of power transistors. The device supports a maximum bootstrap voltage of 600V and operates with a supply voltage range of 10V to 20V. Logic thresholds are set at 8.3V (VIL) and 12.6V (VIH). Typical rise and fall times are 80ns and 40ns, respectively. The IR2111S is housed in an 8-SOIC surface-mount package, suitable for demanding applications in power supply, motor control, and industrial automation sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)80ns, 40ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH8.3V, 12.6V
Current - Peak Output (Source, Sink)250mA, 500mA
ProgrammableNot Verified

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