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IR2109S

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IR2109S

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Infineon Technologies

Categories: Gate Drivers

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Infineon Technologies IR2109S is a half-bridge gate driver IC designed for driving high-side and low-side power switches. This non-inverting device features two independent gate driver channels, suitable for applications utilizing IGBTs and N-channel MOSFETs. It supports a high-side voltage of up to 600V and operates with a supply voltage range of 10V to 20V. The IR2109S offers peak output currents of 200mA sourcing and 350mA sinking, with typical rise and fall times of 150ns and 50ns respectively. Logic threshold voltages are specified at 0.8V for VIL and 2.9V for VIH. Packaged in an 8-SOIC surface-mount configuration, this component is utilized in industrial motor control, power supplies, and other power switching applications. It operates across an extended temperature range from -40°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)150ns, 50ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.9V
Current - Peak Output (Source, Sink)200mA, 350mA
ProgrammableNot Verified

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