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IR2108S

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IR2108S

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Infineon Technologies

Categories: Gate Drivers

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The Infineon Technologies IR2108S is a high-voltage, high-speed power MOSFET and IGBT gate driver. This half-bridge driver IC features independent, non-inverting inputs for each channel. It delivers peak output currents of 200mA source and 350mA sink, with typical rise and fall times of 150ns and 50ns respectively. The device supports a high-side voltage up to 600V, crucial for efficient power switching applications. Operating across a supply voltage range of 10V to 20V, the IR2108S is designed for a wide operating temperature range of -40°C to 150°C. Its 8-SOIC package facilitates surface mounting. This component is commonly employed in industrial motor control, power supplies, and lighting applications where robust gate drive is essential for optimizing switching performance and efficiency.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)150ns, 50ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.9V
Current - Peak Output (Source, Sink)200mA, 350mA
ProgrammableNot Verified

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