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IR2108

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IR2108

IC GATE DRVR HALF-BRIDGE 8DIP

Manufacturer: Infineon Technologies

Categories: Gate Drivers

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Infineon Technologies IR2108, a half-bridge gate driver IC, facilitates efficient control of high-voltage power transistors. This non-inverting device, housed in an 8-PDIP package, supports IGBT and N-Channel MOSFET gate driving. It features independent channels with peak output currents of 200mA sourcing and 350mA sinking, coupled with fast rise and fall times of 150ns and 50ns respectively. The high-side voltage capability extends to 600V, utilizing a bootstrap mechanism. Operating across a supply voltage range of 10V to 20V, the IR2108 is suitable for logic levels with VIH of 2.9V and VIL of 0.8V. The IC is designed for through-hole mounting and operates within an extended temperature range of -40°C to 150°C. Applications include power supplies and motor control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case8-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-PDIP
Rise / Fall Time (Typ)150ns, 50ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.9V
Current - Peak Output (Source, Sink)200mA, 350mA
ProgrammableNot Verified

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