IR2101SPBF
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Infineon Technologies
Categories: Gate Drivers
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Infineon Technologies IR2101SPBF is a high-performance half-bridge gate driver IC featuring independent channels. Designed for driving IGBT and N-Channel MOSFET power devices, this component offers robust performance with a maximum high-side voltage of 600V. The IR2101SPBF delivers peak output currents of 210mA sourcing and 360mA sinking, with typical rise and fall times of 100ns and 50ns respectively. It operates from a supply voltage range of 10V to 20V, with logic thresholds at 0.8V (VIL) and 3V (VIH). This surface-mount device is housed in an 8-SOIC package and operates across an industrial temperature range of -40°C to 150°C. Applications include power factor correction, motor control, and uninterruptible power supplies. It is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Voltage - Supply | 10V ~ 20V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Supplier Device Package | 8-SOIC |
| Rise / Fall Time (Typ) | 100ns, 50ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 0.8V, 3V |
| Current - Peak Output (Source, Sink) | 210mA, 360mA |
| Programmable | Not Verified |
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