IR2101S
IC GATE DRVR HALF-BRIDGE 8SOICManufacturer: Infineon Technologies
Categories: Gate Drivers
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Infineon Technologies IR2101S is a high-performance half-bridge gate driver IC designed for driving IGBT and N-channel MOSFET power transistors. This non-inverting device features independent high and low-side drivers, supporting up to 600V bootstrap voltage. It delivers peak output currents of 210mA sourcing and 360mA sinking, with typical rise and fall times of 100ns and 50ns respectively. The logic input voltage thresholds are 0.8V for VIL and 3V for VIH, operating from a supply voltage range of 10V to 20V. Packaged in an 8-SOIC surface-mount case, the IR2101S is suitable for demanding applications in industrial power supplies, motor control, and lighting systems. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Voltage - Supply | 10V ~ 20V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Supplier Device Package | 8-SOIC |
| Rise / Fall Time (Typ) | 100ns, 50ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 0.8V, 3V |
| Current - Peak Output (Source, Sink) | 210mA, 360mA |
| Programmable | Not Verified |
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