IR2101PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Quality Control: Learn More

The Infineon Technologies IR2101PBF is a dual, half-bridge, high-voltage, high-speed power MOSFET and IGBT driver. This device features independent drivers with a non-inverting input. It is designed for applications requiring robust gate drive capability with a high-side voltage rating of up to 600V. Key specifications include peak output currents of 210mA source and 360mA sink, and a supply voltage range of 10V to 20V. The logic threshold voltages are 0.8V for VIH and 3V for VIL. Typical rise and fall times are 100ns and 50ns, respectively. The IR2101PBF is housed in an 8-PDIP package suitable for through-hole mounting. This component is widely utilized in industrial power supplies, motor control, and power factor correction circuits. Its operating temperature range is -40°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:

Download Free CAD Model:

Technical Details:

Packaging	Tube
Package / Case	8-DIP (0.300"", 7.62mm)
Mounting Type	Through Hole
Operating Temperature	-40°C ~ 150°C (TJ)
Voltage - Supply	10V ~ 20V
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	600 V
Supplier Device Package	8-PDIP
Rise / Fall Time (Typ)	100ns, 50ns
Channel Type	Independent
Driven Configuration	Half-Bridge
Number of Drivers	2
Gate Type	IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH	0.8V, 3V
Current - Peak Output (Source, Sink)	210mA, 360mA
Programmable	Not Verified