IR2011S
IC GATE DRVR HI/LOW SIDE 8SOICManufacturer: Infineon Technologies
Categories: Gate Drivers
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Infineon Technologies IR2011S is a dual, high-side/low-side gate driver IC housed in an 8-SOIC package. This device features independent channels and is designed to drive N-channel MOSFETs. The IR2011S offers a peak output current of 1A for both source and sink operations, with a high-side voltage capability up to 200V from the bootstrap supply. Its inverting input logic ensures precise control, with specified VIH and VIL thresholds at 2.2V and 0.7V respectively. Typical rise and fall times are 35ns and 20ns, facilitating efficient switching. Operating across a wide temperature range of -40°C to 150°C (TJ), this component is suitable for demanding applications in power conversion, motor control, and industrial automation. The surface mount mounting type and tube packaging are standard for high-volume production environments.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Voltage - Supply | 10V ~ 20V |
| Input Type | Inverting |
| High Side Voltage - Max (Bootstrap) | 200 V |
| Supplier Device Package | 8-SOIC |
| Rise / Fall Time (Typ) | 35ns, 20ns |
| Channel Type | Independent |
| Driven Configuration | High-Side or Low-Side |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 0.7V, 2.2V |
| Current - Peak Output (Source, Sink) | 1A, 1A |
| Programmable | Not Verified |
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