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AUIRS2301STR

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AUIRS2301STR

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Infineon Technologies

Categories: Gate Drivers

Quality Control: Learn More

Infineon Technologies AUIRS2301STR is a high-voltage, high-speed power MOSFET and IGBT gate driver. This AEC-Q100 qualified component features two independent half-bridge drivers, each capable of operating with a high-side voltage up to 600V. The device offers a 200mA source and 350mA sink peak output current, facilitating efficient driving of power transistors. Designed for surface mounting in an 8-SOIC package, it operates across a wide temperature range of -40°C to 150°C. Typical rise and fall times are 130ns and 50ns respectively. The AUIRS2301STR is suitable for automotive applications, including electric vehicle powertrains, automotive power supplies, and advanced driver-assistance systems (ADAS). The supply voltage range is 5V to 20V, with logic levels for VIH/VIL at 2.5V and 0.8V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply5V ~ 20V
Input Type-
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)130ns, 50ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.5V
Current - Peak Output (Source, Sink)200mA, 350mA
GradeAutomotive
ProgrammableNot Verified
QualificationAEC-Q100

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