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AUIRS21811STR

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AUIRS21811STR

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Infineon Technologies

Categories: Gate Drivers

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Infineon Technologies AUIRS21811STR is a high-voltage, high-speed, half-bridge gate driver IC in an 8-SOIC package. Designed for surface mounting, this component features independent channels with peak output currents of 1.9A sourcing and 2.3A sinking. The gate driver is optimized for driving IGBTs and N-Channel MOSFETs, supporting a high-side voltage up to 600V. Its non-inverting input logic levels are 0.8V for VIL and 2.5V for VIH. Typical rise and fall times are 60ns and 35ns respectively. Operating across a wide temperature range of -40°C to 150°C, the AUIRS21811STR is suitable for applications in industrial power supplies, motor control, and automotive systems. The device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)60ns, 35ns (Max)
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2.5V
Current - Peak Output (Source, Sink)1.9A, 2.3A
ProgrammableNot Verified

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