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AUIRS2112S

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AUIRS2112S

IC GATE DRVR HALF-BRIDGE 16SOIC

Manufacturer: Infineon Technologies

Categories: Gate Drivers

Quality Control: Learn More

Infineon Technologies AUIRS2112S is a high-voltage, high-speed power MOSFET and IGBT gate driver. This AEC-Q100 qualified component features a half-bridge configuration with two independent gate drivers. The device supports a wide supply voltage range from 3V to 20V and boasts peak output currents of 290mA source and 600mA sink. It is designed for driving N-channel MOSFETs and IGBTs with a maximum high-side bootstrap voltage of 600V. The input is non-inverting, and the logic voltage thresholds are 6V (VIL) and 9.5V (VIH). Typical rise and fall times are 60ns and 30ns respectively. The AUIRS2112S is housed in a 16-SOIC surface mount package and is rated for operation across an extended temperature range of -40°C to 150°C. This component is commonly utilized in automotive applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / Case16-SOIC (0.295"", 7.50mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Voltage - Supply3V ~ 20V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package16-SOIC
Rise / Fall Time (Typ)60ns, 30ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH6V, 9.5V
Current - Peak Output (Source, Sink)290mA, 600mA
GradeAutomotive
ProgrammableNot Verified
QualificationAEC-Q100

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