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2ED2778S01GXTMA1

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2ED2778S01GXTMA1

IC GATE DRVR HALF-BRIDGE VSON-10

Manufacturer: Infineon Technologies

Categories: Gate Drivers

Quality Control: Learn More

Infineon Technologies 2ED2778S01GXTMA1 is a dual-channel, half-bridge gate driver IC. Featuring independent control for each driver, this component is suitable for applications requiring efficient driving of N-channel MOSFETs. The device offers peak output currents of 4A source and 8A sink, with typical rise and fall times of 24ns and 12ns respectively. It operates with a supply voltage range of 7V to 18V and supports a high-side bootstrap voltage up to 140V. The 2ED2778S01GXTMA1 utilizes non-inverting logic inputs with VIL and VIH thresholds of 0.8V and 2V, respectively. Housed in a PG-VSON-10-5 package, this surface-mount component is designed for operation across an ambient temperature range of -40°C to 125°C. This device finds application in power conversion systems within the automotive and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: BoxDatasheet:
Technical Details:
PackagingBox
Package / Case10-VFDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TA)
Voltage - Supply7V ~ 18V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)140 V
Supplier Device PackagePG-VSON-10-5
Rise / Fall Time (Typ)24ns, 12ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH0.8V, 2V
Current - Peak Output (Source, Sink)4A, 8A
Grade-
Programmable-
Qualification-

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