ISG0614N06NM5HSCATMA1
ISG0614N06NM5HSCATMA1Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Mosfet Array 60V 31A (Ta), 233A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-WHITFN-10-1
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 10-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3W (Ta), 167W (Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 233A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 6400pF @ 30V |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 50A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 102nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.3V @ 86µA |
| Supplier Device Package | PG-WHITFN-10-1 |
| Grade | - |
| Qualification | - |
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