IRLHS6376TR2PBF
MOSFET 2N-CH 30V 3.6A PQFNManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies IRLHS6376TR2PBF is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3.6A at 25°C. The low Rds(on) of 63mOhm at 3.4A and 4.5V Vgs, coupled with a logic-level gate, ensures optimized performance in low-voltage drive scenarios. With a maximum power dissipation of 1.5W and a gate charge (Qg) of 2.8nC at 4.5V, this MOSFET array is suitable for applications requiring high switching frequencies and reduced power loss. It is supplied in a compact 6-PQFN (2x2) surface-mount package, commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 3.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Supplier Device Package | 6-PQFN (2x2) |
Request a Quote
Clients Also Buy
IRF8910GPBF
MOSFET 2N-CH 20V 10A 8SO
IRF8910TRPBF-1
MOSFET 2N-CH 20V 10A 8SO
AUIRF7316QTR
MOSFET 2P-CH 30V 8SOIC
