IRLHS6276TR2PBF
MOSFET 2N-CH 20V 4.5A PQFNManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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The Infineon Technologies IRLHS6276TR2PBF is a dual N-channel MOSFET array designed for high-efficiency power management applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C. With a low on-resistance (Rds On) of 45mOhm maximum at 3.4A and 4.5V, it minimizes conduction losses. The logic level gate ensures compatibility with lower voltage control signals. Key parameters include a gate charge (Qg) of 3.1nC maximum at 4.5V and input capacitance (Ciss) of 310pF maximum at 10V. The device is supplied in a compact 6-PQFN Dual (2x2) surface mount package, delivered on cut tape, and offers a maximum power dissipation of 1.5W. Its performance characteristics make it suitable for use in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 10V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Supplier Device Package | 6-PQFN Dual (2x2) |
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