IRL6372TRPBF
MOSFET 2N-CH 30V 8.1A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Infineon Technologies HEXFET® IRL6372TRPBF is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component offers a 30V Drain-to-Source Voltage (Vdss) and a continuous drain current rating of 8.1A at 25°C. Featuring a logic level gate, it exhibits a low on-resistance (Rds On) of 17.9mOhm at 8.1A and 4.5V Vgs, with a maximum gate charge (Qg) of 11nC at 4.5V. The device is provided in an 8-SOIC package suitable for surface mounting, with a maximum power dissipation of 2W. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET array is commonly utilized in automotive and industrial automation systems requiring robust power management. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 25V |
| Rds On (Max) @ Id, Vgs | 17.9mOhm @ 8.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Supplier Device Package | 8-SO |
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