IRL6372PBF
MOSFET 2N-CH 30V 8.1A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET IRL6372PBF is a dual N-channel power MOSFET designed for high-efficiency switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 8.1A at 25°C. The low on-resistance (Rds On) of 17.9mOhm at 8.1A and 4.5V gate-source voltage (Vgs) makes it suitable for power management. With a logic-level gate, it offers compatibility with lower voltage control signals. The IRL6372PBF has a maximum power dissipation of 2W and a gate charge (Qg) of 11nC at 4.5V. Its input capacitance (Ciss) is rated at 1020pF at 25V. Packaged in an 8-SOIC (0.154"", 3.90mm Width) for surface mounting, this component is utilized in automotive and industrial automation sectors. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 25V |
| Rds On (Max) @ Id, Vgs | 17.9mOhm @ 8.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Supplier Device Package | 8-SO |