IRL6297SDTRPBF
MOSFET 2N-CH 20V 15A DIRECTFETSAManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRL6297SDTRPBF is a 20V, 2 N-Channel MOSFET array designed for high-efficiency power switching applications. This device features a low Rds(on) of 4.9mOhm at 15A and 4.5V Vgs, ensuring minimal conduction losses. The logic level gate threshold of 1.1V at 35µA simplifies drive requirements from low-voltage controllers. With a continuous drain current capability of 15A and a maximum power dissipation of 1.7W, it is suitable for demanding automotive, industrial, and consumer electronics power management solutions. The DirectFET™ Isometric SA package offers excellent thermal performance for surface mount applications, operating across a temperature range of -40°C to 150°C. Key parameters include a 54nC gate charge (Qg) and 2245pF input capacitance (Ciss).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SA |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.7W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 15A |
| Input Capacitance (Ciss) (Max) @ Vds | 2245pF @ 10V |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 15A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.1V @ 35µA |
| Supplier Device Package | DIRECTFET™ SA |
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