IRFI4212H-117P
MOSFET 2N-CH 100V 11A TO220-5Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies MOSFET array, part number IRFI4212H-117P, features two N-channel devices within a TO-220-5 Full-Pak package. This through-hole component offers a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 11A at 25°C, with a maximum power dissipation of 18W. The Rds On is specified at 72.5mOhm maximum at 6.6A and 10V Vgs. Key parameters include a gate charge (Qg) of 18nC maximum at 10V Vgs and input capacitance (Ciss) of 490pF maximum at 50V Vds. The operating temperature range is -55°C to 150°C (TJ). This MOSFET array is suitable for applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 Full Pack |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 18W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 11A |
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 50V |
| Rds On (Max) @ Id, Vgs | 72.5mOhm @ 6.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-5 Full-Pak |
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