IRFI4020H-117PXKMA1
MOSFET 2N-CH 200V 9.1A TO220-5Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRFI4020H-117PXKMA1 is a 200V N-channel MOSFET array designed for power switching applications. This through-hole component, packaged in a TO-220-5 Full-Pak, offers a continuous drain current of 9.1A at 25°C with a maximum power dissipation of 21W. Key electrical specifications include a drain-source voltage (Vdss) of 200V and a low on-resistance of 100mOhm at 5.5A and 10V. The gate charge (Qg) is 29nC maximum at 10V, and the input capacitance (Ciss) is 1240pF maximum at 25V. Operating temperature range is -55°C to 150°C. This MOSFET array is suitable for use in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 21W (Tc) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 9.1A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 25V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 5.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.9V @ 100µA |
| Supplier Device Package | TO-220-5 Full-Pak |
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