IRFI4020H-117P
MOSFET 2N-CH 200V 9.1A TO220-5Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRFI4020H-117P is a 200V, 2 N-Channel MOSFET array designed for demanding applications. This device features a continuous drain current (Id) of 9.1A at 25°C and a low on-resistance (Rds On) of 100mOhm at 5.5A, 10V. With a drain-to-source breakdown voltage (Vdss) of 200V and a maximum power dissipation of 21W, it offers robust performance. Key parameters include a gate charge (Qg) of 29nC at 10V and input capacitance (Ciss) of 1240pF at 25V. The MOSFET array is housed in a TO-220-5 Full Pack through-hole package, suitable for power supply designs, motor control, and industrial automation. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 Full Pack |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 21W |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 9.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 25V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 5.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.9V @ 100µA |
| Supplier Device Package | TO-220-5 Full-Pak |
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