IRFI4019HG-117P
MOSFET 2N-CH 150V 8.7A TO220-5Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies MOSFET array, part number IRFI4019HG-117P, features two N-channel MOSFETs in a TO-220-5 Full-Pak package. This through-hole component offers a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 8.7A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 95mOhm at 5.2A and 10V, with a gate charge (Qg) of 20nC at 10V. Input capacitance (Ciss) is 810pF at 25V. With a maximum power dissipation of 18W and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in industrial power supplies and motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 18W |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 25V |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 5.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Supplier Device Package | TO-220-5 Full-Pak |
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