IRFI4019H-117PXKMA1
MOSFET 2N-CH 150V 8.7A TO220-5Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRFI4019H-117PXKMA1 is a dual N-channel MOSFET array housed in a TO-220-5 Full-Pak package. This component offers a Drain-to-Source voltage (Vdss) of 150V and a continuous drain current (Id) of 8.7A at 25°C (Tc), with a maximum power dissipation of 18W (Tc). The Rds On is specified at 95mOhm maximum at 5.2A, 10V. Key parameters include a gate charge (Qg) of 20nC maximum at 10V and input capacitance (Ciss) of 810pF maximum at 25V, 25V. Designed for through-hole mounting, it operates within an ambient temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in industrial power control and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 18W (Tc) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 25V |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 5.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Supplier Device Package | TO-220-5 Full-Pak |
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